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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

Growth of single-crystalline zirconium diboride thin film on sapphire

(3) Bera, Sambhunath a,b Sumiyoshi, Yuichiro a Yamada Takamura, Yukiko a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b CEA SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONSHIPS; EX SITU; FREE SURFACES; HIGH-ENERGY ELECTRON; IN-SITU; NITRIDE SEMICONDUCTORS; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE; THERMAL DECOMPOSITIONS; ZIRCONIUM DIBORIDE;

BORIDES; CORUNDUM; DIFFRACTION; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE MISMATCH; PYROLYSIS; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; THIN FILM DEVICES; THIN FILMS; VACUUM; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM; ZIRCONIUM COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349644122 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226881 Document Type: Article

Times cited : (22)

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