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Volumn 401-402, Issue , 2007, Pages 291-295

Deep defect states in narrow band-gap semiconductors

Author keywords

Deep defect states; Group IV and compounds; Nanostructures; Narrow band gap semiconductors; Theory

Indexed keywords

BONDING; DEFECT STRUCTURES; DENSITY FUNCTIONAL THEORY; ENERGY GAP; IMPURITIES; NANOSTRUCTURED MATERIALS; VALENCE BANDS;

EID: 36048930789     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.169     Document Type: Article
Times cited : (30)

References (33)
  • 1
    • 0842331448 scopus 로고    scopus 로고
    • Hsu K.-F., et al. Science 303 (2004) 818
    • (2004) Science , vol.303 , pp. 818
    • Hsu, K.-F.1
  • 6
    • 0032516662 scopus 로고    scopus 로고
    • For a discussion of shallow versus deep defects and the role of defects in semiconductors, see, e.g., H.J. Queisser, E.E. Haller, Science 281 (1998) 945.
  • 14
  • 16
    • 36049022991 scopus 로고    scopus 로고
    • K. Hoang, S.D. Mahanti, P. Jena, Phys. Rev. B to be published.
  • 28
    • 36049048194 scopus 로고    scopus 로고
    • Energetically, it is more favorable to have substitutional and interstitial In impurities simultaneously than just the latter. The formation energies of some In impurities [eV per impurity or impurity complexes]: +0.476 (substitutional at the Pb site), +1.981 (interstitial at the tetrahedral site), +1.509 (the substitutional at the center of the supercell and the interstitial at the first tetrahedral site from the center present simultaneously). The results were obtained in calculations using the (2 × 2 × 2) supercell; spin-orbit interaction was not included. For details on the formation energy calculations, see Ref. [11].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.