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1
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12144287081
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100°C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes
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Y. Muroya, T. Okuda, R.Kobayashi, K. Tsuruoka, Y. Ohsawa, T.Koui, T. Tsukuda, and T. Nakamura, "100°C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes," presented at the OFC, Atlanta, GA, 2003, Paper FG6.
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OFC, Atlanta, GA, 2003
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Muroya, Y.1
Okuda, T.2
Kobayashi, R.3
Tsuruoka, K.4
Ohsawa, Y.5
Koui, T.6
Tsukuda, T.7
Nakamura, T.8
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2
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84947933932
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115°C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications
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presented at the Paper PD40-1
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K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, and M. Kudo, "115°C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications," presented at the OFC, Atlanta, GA, 2003, Paper PD40-1.
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OFC, Atlanta, GA, 2003
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Nakahara, K.1
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Tanaka, S.3
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Taniguchi, T.6
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Nomoto, E.8
Fujisaki, S.9
Kudo, M.10
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3
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65249097146
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Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure λ/4-shifted DFB lasers
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presented at the Paper Mo.3.4.4
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K. Takada, M. Matsuda, S. Okumura, M. Ekawa, and T. Yamamoto, "Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure λ/4-shifted DFB lasers," presented at the ECOC, Cannes, France, 2006, Paper Mo.3.4.4.
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ECOC, Cannes, France, 2006
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Takada, K.1
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Yamamoto, T.5
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4
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84866119984
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120°C uncooled operation of direct modulated 1.3 μm AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications
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S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, and N. Tomita, "120°C uncooled operation of direct modulated 1.3 μm AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications," presented at the OFC, Los Angeles, CA, 2004, Paper ThD2.
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OFC, Los Angeles, CA, 2004
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Shirai, S.1
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5
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33845369613
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Wide temperature (-20°C -100°C) operation of an uncooled direct-modulation 1.3 μm InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications
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H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, and M. Aoki, "Wide temperature (-20°C -100°C) operation of an uncooled direct-modulation 1.3 μm InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications," presented at the OFC, Anaheim, CA, 2006, Paper OThN3.
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OFC, Anaheim, CA, 2006
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Singh, H.1
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Aoki, M.11
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6
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84951143060
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43-Gbit/s operation of 1.55-μm electro-absorption modulator integrated DFB laser modules for 2-km transmission
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K. Naoe, N. Sasada, Y. Sakuma, K. Motoda, T. Kato, M. Akashi, J. Shimizu, T. Kitatani, M. Aoki, M. Okayasu, and K. Uomi, "43-Gbit/s operation of 1.55-μm electro-absorption modulator integrated DFB laser modules for 2-km transmission," presented at the ECOC, Glasgow, Scotland, 2005, Paper Th 2.6.4.
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High-power 10-Gb/s semi-cooled operation of AlGaInAs electroabsorption modulator integrated λ/4-shifted DFB laser
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