120°C uncooled operation of direct modulated 1.3μm AlGalnAs-MQW DFB Laser Diodes for 10Gb/s telecom applications

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 2, Issue , 2004, Pages 62-64

  Shirai, S ^a   Tatsuoka, Y ^a   Watatani, C ^a   Ota, T ^a   Takagi, K ^a   Aoyagi, T ^a   Omura, E ^a   Tomita, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

10 GB/ S; BURIED GRATING; OUTPUT POWER; TELECOM APPLICATIONS; UNCOOLED OPERATION;

LIGHT SOURCES;

DISTRIBUTED FEEDBACK LASERS;

EID: 84866119984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. CE. Zah et al., "High-Performance Uncooled 1 3m AlGalnAs/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications," IEEE J.Quantum Electron., vol 30, pp 551, 1994.
2. T.Kadowaki et al, "Highly Reliable 1.3 μm AIGalnAs FP lasers with low power penalty under uncooled 10Gbps operation at 85°C," Tech. Dig, OFC 2001, WC3, 2001
3. T Takiguchi et al., "1 3μm Uncooled AlGalnAs-MQW DFB Laser with λ4-shifled Grating," Tech. Dig., OFC 2002, ThF3, 2002
4. K.Nakahara et al., " 115°C, 125-Gb/s direct modulation of 1.3 -μm JnGaAlAs-MQW RWG DFB laser with notch-free grating structure for datacom applications," Tech. Dig., OFC2003, PD40,2003