Wide temperature range operation at 43Gbit/s of 1.55μm InGaAlAs electroabsorption modulated laser with single active layer

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 358-360

  Garreau, A ^a   Cuisin, M C ^a   Provost, J G ^a   Jorge, F ^a   Konczykowska, A ^a   Jany, C ^a   Decobert, J ^a   Drisse, O ^a   Blache, F ^a   Carpentier, D ^a   Derouin, E ^a   Martin, F ^a   Lagay, N ^a   Landreau, J ^a   Kazmierski, C ^a  

^a ALCATEL THALES III V LAB   (France)

Author keywords

40Gbit s; AlGaInAs; Electroabsorption modulated laser; Electroabsorption modulator

Indexed keywords

ELECTROABSORPTION MODULATORS; INDIUM COMPOUNDS;

DYNAMIC EXTINCTION RATIO; ELECTROABSORPTION MODULATED LASER; SINGLE ACTIVE LAYER;

LASERS;

EID: 34748877238     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381197     Document Type: Conference Paper

References (9)

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