100°C, 10-Gb/s Direct Modulation with a Low Operation Current of 1.3-μm AlGaInAs Buried Heterostructure DFB Laser Diodes

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 86, Issue , 2003, Pages 683-684

  Muroya, Y ^a   Okuda, T ^a   Kobayashi, R ^a   Tsuruoka, K ^a   Ohsawa, Y ^a   Koui, T ^a   Tsukuda, T ^a   Nakamura, T ^a   Ito, A ^a   Shimizu, J ^a   Kobayashi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COSTS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC POWER UTILIZATION; HETEROJUNCTIONS; LIGHT MODULATION; LIGHT TRANSMISSION; OPTICAL WAVEGUIDES; RELAXATION OSCILLATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; DIODES; ELECTRONS; INDIUM PHOSPHIDE; MODULATION; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTICAL MATERIALS; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS;

ETHERNET; RIDGE WAVEGUIDES;

SEMICONDUCTOR LASERS; OPTICAL FIBER COMMUNICATION;

BURIED HETEROSTRUCTURES; CONDUCTING MATERIALS; DIRECT MODULATION; FREQUENCY; LOW OPERATION CURRENTS; MODULATION CURRENT; OPERATING CURRENTS; QUANTUM WELL DEVICE;

EID: 12144287081     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. T. Nakamura, et al., "High-Quality 1.3-μm AlGaInAs MQW by Narrow-Stripe Selective Metalorganic Vapor-Phased Epitaxy and Its Application in Buried Heterostructure Laser Diodes," in Proc. IPRM'02, A1-5, 35-38, 2002.
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