-
1
-
-
70349604084
-
-
Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, and T. Nakamura, 100°C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes, presented at the OFC, Atlanta, GA, 2003, FG6.
-
Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, and T. Nakamura, "100°C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes," presented at the OFC, Atlanta, GA, 2003, FG6.
-
-
-
-
2
-
-
84947933932
-
-
K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, and M. Kudo, 115°C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications, presented at the OFC, Atlanta, GA, 2003, PD40-1.
-
K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, and M. Kudo, "115°C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications," presented at the OFC, Atlanta, GA, 2003, PD40-1.
-
-
-
-
3
-
-
65249097146
-
-
K. Takada, M. Matsuda, S. Okumura, M. Ekawa, and T. Yamamoto, Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure λ/4-shifted DFB lasers, presented at the ECOC, Cannes, France, 2006, Mo.3.4.4.
-
K. Takada, M. Matsuda, S. Okumura, M. Ekawa, and T. Yamamoto, "Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure λ/4-shifted DFB lasers," presented at the ECOC, Cannes, France, 2006, Mo.3.4.4.
-
-
-
-
4
-
-
84866119984
-
-
S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, and N. Tomita, 120°C uncooled operation of direct modulated 1.3 μm AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications, presented at the OFC, Los Angeles, CA, 2004, ThD2.
-
S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, and N. Tomita, "120°C uncooled operation of direct modulated 1.3 μm AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications," presented at the OFC, Los Angeles, CA, 2004, ThD2.
-
-
-
-
5
-
-
33845369613
-
-
H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, and M. Aoki, Wide temperature (-20°C-100°C) operation of an uncooled direct-modulation 1.3 μm InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications, presented at the OFC, Anaheim, CA, 2006, OThN3.
-
H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, and M. Aoki, "Wide temperature (-20°C-100°C) operation of an uncooled direct-modulation 1.3 μm InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications," presented at the OFC, Anaheim, CA, 2006, OThN3.
-
-
-
-
6
-
-
49349114764
-
-
S. Makino, K. Shinoda, T. Kitatani, T. Shiota, M. Aoki, N. Sasada, and K. Naoe, Uncooled, electroabsorption modulator integrated DFB laser, presented at the OFC, San Diego, CA, 2008, OthK6.
-
S. Makino, K. Shinoda, T. Kitatani, T. Shiota, M. Aoki, N. Sasada, and K. Naoe, "Uncooled, electroabsorption modulator integrated DFB laser," presented at the OFC, San Diego, CA, 2008, OthK6.
-
-
-
-
7
-
-
70349583207
-
-
H. Debregeas-Sillard, C. Kazmierski, M. Le Pallec, J.-G. Provost, D. Carpentier, S. Perrin, and S. Fabre, Low-cost coolerless 10 Gb/s integrated laser modulator, presented at the OFC, Los Angeles, CA, 2004, ThD4.
-
H. Debregeas-Sillard, C. Kazmierski, M. Le Pallec, J.-G. Provost, D. Carpentier, S. Perrin, and S. Fabre, "Low-cost coolerless 10 Gb/s integrated laser modulator," presented at the OFC, Los Angeles, CA, 2004, ThD4.
-
-
-
-
8
-
-
0742287113
-
High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
-
N. C. Frateschi, J. Zhang, W. J. Choi, H. Gebretsadik, R. Jambunathan, and A. E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules," Electron. Lett., vol. 40, no. 2, pp. 140-141, 2004.
-
(2004)
Electron. Lett
, vol.40
, Issue.2
, pp. 140-141
-
-
Frateschi, N.C.1
Zhang, J.2
Choi, W.J.3
Gebretsadik, H.4
Jambunathan, R.5
Bond, A.E.6
-
9
-
-
84931031899
-
-
K. Takada, S. Akiyama, M. Matsuda, S. Okumura, M. Ekawa, and T. Yamamoto, High-power 10-Gb/s semi-cooled operation of AlGaInAs electroabsorption modulator integrated λ/4-shifted DFB laser, presented at the ECOC, Berlin, Germany, 2007, We.8.1.6.
-
K. Takada, S. Akiyama, M. Matsuda, S. Okumura, M. Ekawa, and T. Yamamoto, "High-power 10-Gb/s semi-cooled operation of AlGaInAs electroabsorption modulator integrated λ/4-shifted DFB laser," presented at the ECOC, Berlin, Germany, 2007, We.8.1.6.
-
-
-
-
10
-
-
84897063710
-
-
W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, and F. Kano, Extended operating temperature range of 125°C (-25°C to 100°C) of 10-Gbit/s, 1.55-μm electroabsorption modulator integrated DFB laser for 80-km SMF transmission, presented at the OFC, San Diego, CA, 2009, OThT4.
-
W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, and F. Kano, "Extended operating temperature range of 125°C (-25°C to 100°C) of 10-Gbit/s, 1.55-μm electroabsorption modulator integrated DFB laser for 80-km SMF transmission," presented at the OFC, San Diego, CA, 2009, OThT4.
-
-
-
-
11
-
-
33751006831
-
10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure
-
Jan
-
K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, and K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 109-111, Jan. 2006.
-
(2006)
IEEE Photon. Technol. Lett
, vol.18
, Issue.1
, pp. 109-111
-
-
Yashiki, K.1
Kato, T.2
Chida, H.3
Tsuruoka, K.4
Kobayashi, R.5
Sudo, S.6
Sato, K.7
Kudo, K.8
-
12
-
-
46349098374
-
Fabrication and packaging of 40-Gb/s AlGaInAs multiple- quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme
-
Jun
-
C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, and Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs multiple- quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme," J. Lightw. Technol., vol. 26, no. 11, pp. 1464-1471, Jun. 2008.
-
(2008)
J. Lightw. Technol
, vol.26
, Issue.11
, pp. 1464-1471
-
-
Sun, C.1
Xiong, B.2
Wang, J.3
Cai, P.4
Xu, J.5
Huang, J.6
Yuan, H.7
Zhou, Q.8
Luo, Y.9
-
13
-
-
34748877238
-
Wide temperature range operation at 43 Gbit/s of 1.55 μm InGaAlAs electroabsorption modulated laser with single active layer
-
A. Garreau, M.-C. Cuisin, J.-G. Provost, F. Jorge, A. Konczykowska, C. Jany, J. Decobert, O. Drisse, F. Blanche, D. Carpentier, E. Derouin, F. Martin, N. Lagay, J. Landreau, and C. Kazmierski, "Wide temperature range operation at 43 Gbit/s of 1.55 μm InGaAlAs electroabsorption modulated laser with single active layer," in Proc. Int. Conf. Indium Phosphide Related Materials, 2007, pp. 358-360.
-
(2007)
Proc. Int. Conf. Indium Phosphide Related Materials
, pp. 358-360
-
-
Garreau, A.1
Cuisin, M.-C.2
Provost, J.-G.3
Jorge, F.4
Konczykowska, A.5
Jany, C.6
Decobert, J.7
Drisse, O.8
Blanche, F.9
Carpentier, D.10
Derouin, E.11
Martin, F.12
Lagay, N.13
Landreau, J.14
Kazmierski, C.15
-
14
-
-
0032595741
-
Efficient coupling in integrated twin-waveguide lasers using waveguide tapers
-
Sep
-
P. V. Studenkov, M. R. Gokhale, and S. R. Forrest, "Efficient coupling in integrated twin-waveguide lasers using waveguide tapers," IEEE Photon. Technol. Lett., vol. 11, no. 9, pp. 1096-1098, Sep. 1999.
-
(1999)
IEEE Photon. Technol. Lett
, vol.11
, Issue.9
, pp. 1096-1098
-
-
Studenkov, P.V.1
Gokhale, M.R.2
Forrest, S.R.3
-
15
-
-
84947903710
-
-
M. R. Gokhale, P. V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, and J. van Saders, Uncooled, 10-Gb/s 1310 nm electroabsorption modulated laser, presented at the OFC, Atlanta, GA, 2003, PDP 42.
-
M. R. Gokhale, P. V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, and J. van Saders, "Uncooled, 10-Gb/s 1310 nm electroabsorption modulated laser," presented at the OFC, Atlanta, GA, 2003, PDP 42.
-
-
-
-
16
-
-
0028378499
-
Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well
-
T. Ishikawa and J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well," J. Quantum Electron., vol. 30, no. 2, pp. 562-570, 1994.
-
(1994)
J. Quantum Electron
, vol.30
, Issue.2
, pp. 562-570
-
-
Ishikawa, T.1
Bowers, J.E.2
|