Integrated 1.3 μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5451, Issue , 2004, Pages 1-7

  Knödl, Thomas ^a   Hanke, Christian ^a   Saravanan, Brem Kumar ^a   Peschke, Martin ^a,b   Schreiner, Rupert ^a   Stegmüller, Bernhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Distributed feedback laser; Electroabsorption modulator; Monolithic integration; Optical data transmission

Indexed keywords

AMPLITUDE MODULATION; BANDWIDTH; CAPACITANCE; ELECTROOPTICAL EFFECTS; LIGHT ABSORPTION; LIGHT AMPLIFIERS; LIGHT EXTINCTION; LIGHT POLARIZATION; MICROPROCESSOR CHIPS; OPTICAL FIBERS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SENSITIVITY ANALYSIS; SIGNAL PROCESSING; VOLTAGE CONTROL;

DISTRIBUTED FEEDBACK LASER; ELECTROABSORPTION MODULATOR; MONOLITHIC INTEGRATION; OPTICAL DATA TRANSMISSION;

INTEGRATED OPTICS;

EID: 12344309209     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.544610     Document Type: Conference Paper

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