Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1949-1951

  Khai, Pum Chian ^a   Suzue, Takaaki ^a   Sakai, Yusuke ^a   Selvaraj, S Lawrence ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electrical optical properties; High mobility transistor; InGaN GaN; MOCVD; Structure

Indexed keywords

ELECTRICAL/OPTICAL PROPERTIES; HIGH MOBILITY; INGAN/GAN; MOCVD; STRUCTURE;

ELECTRIC PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL CORRELATION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRUCTURAL PROPERTIES; SUBSTRATES; TRANSISTORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955832330     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983468     Document Type: Conference Paper

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