Influence of deep pits on the breakdown of metalorganic chemical vapor deposition grown AlGaN/GaN high electron mobility transistors on silicon

Applied Physics Express

Volumn 2, Issue 11, 2009, Pages

  Selvaraj, S Lawrence ^a   Suzue, Takaaki ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEEP PIT; ETCH PITS; HEXAGONAL PYRAMIDS; HIGH GROWTH TEMPERATURES; METALORGANIC CHEMICAL VAPOR DEPOSITION; SI SUBSTRATES; SILICON SUBSTRATES; SURFACE TERMINATION; TEM IMAGES; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRON MICROSCOPES; ELECTRON MOBILITY; GALLIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73249148849     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.111005     Document Type: Article

References (6)

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