Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

  Ryu, Sangwoo ^a   Son, Jong Yeog ^a   Shin, Young Han ^a   Jang, Hyun M ^a   Scott, James F ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL HETEROSTRUCTURE; EPITAXIALLY GROWN; FERROELECTRIC MEMORY; FILM CAPACITORS; HETEROEPITAXIAL FILMS; HIGH-DENSITY; LOW TEMPERATURES; MGO SUBSTRATE; NON-VOLATILE MEMORIES; POLARIZATION SWITCHING; RETENTION CHARACTERISTICS; SENSING MARGIN;

EPITAXIAL GROWTH; OPTICAL SWITCHES; PLATINUM; POLARIZATION; THIN FILMS;

CAPACITORS;

EID: 77955828283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275012     Document Type: Article

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