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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1916-1918

Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers

(9) Takeda, Kenichiro a Mori, Fumiaki a Ogiso, Yuji a Ichikawa, Tomoaki a Nonaka, Kentaro a Iwaya, Motoaki a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

Dislocations; GaN AlGaN; MOVPE; Photoluminescence; Quantum wells

Indexed keywords

CARRIER DENSITY; DISLOCATION DENSITIES; DISLOCATIONS; EPITAXIAL LATERAL OVERGROWTH; EXCITATION INTENSITY; FACET CONTROLLED EPITAXIAL LATERAL OVERGROWTHS; GAN/ALGAN; INTERNAL QUANTUM EFFICIENCY; LOW-DISLOCATION DENSITY; MOVPE; MULTI QUANTUM WELLS; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM WELL; THREADING DISLOCATION DENSITIES; UNDERLYING LAYERS;

EPITAXIAL GROWTH; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION REPEATERS;

QUANTUM EFFICIENCY;

EID: 77955816587 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200983625 Document Type: Conference Paper

Times cited : (22)

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