Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1559-1561

  Kato, Naofumi ^a   Sato, S ^a   Sugimura, H ^a   Sumii, T ^a   Okada, N ^a   Imura, M ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a   Maruyama, H ^d   Takagi, T ^b   Bandoh, A ^c  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

^c High Performance Materials Department   (Japan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; ALGAN LAYERS; ALN; ALN LAYERS; C-PLANE SAPPHIRE SUBSTRATES; CRACK FREE; CRYSTALLINE QUALITY; DISLOCATION DENSITIES; HIGH QUALITY; HIGH TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; TEM; V/III RATIO; X RAY ROCKING CURVE;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTORESISTS; SURFACE ROUGHNESS; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 68449099874     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778480     Document Type: Conference Paper

References (3)

1. M. Imura, K. Nakano, T. Kitano, N. Fujimoto, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh, Appl. Phys. Lett. 89, 221901 (2006).
2. M. Imura, N. Fujimoto, T. Kitano, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh, Jpn. J. Appl. Phys. 45, 11 (2006).
3. N. Okada, N. Fujimoto, T. Kitano, G. Narita, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh, Jpn. J. Appl. Phys. 45, 2502 (2006).