High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 377-380

  Kawashima, Takeshi ^a   Iida, Kazuyoshi ^a   Miyake, Yasuto ^a   Honshio, Akira ^a   Kasugai, Hideki ^a   Imura, Masataka ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A3. Organometallic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO); SELECTIVE EPITAXY; SEMICONDUCTING III-V MATERIALS; THREADING DISLOCATIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 9944258913     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.101     Document Type: Conference Paper

References (6)

1. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
2. H. Amano, I. Akasaki, Mater. Res. Soc. Ext. Abstr. EA-21 (1991) 165.
3. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28 (1989) L2112.
4. H. Amano, M. Kitoh, K. Hiramatsu, I. Akasaki, J. Electrochem. Soc. 137 (1990) 1639.
5. A. Usui, H. Sunakawa, A. Sakai, A.A. Yamaguchi, Jpn. J. Appl. Phys. 36 (1997) L899.
6. H. Miyake, A. Motogaito, K. Hiramatsu, Jpn. J. Appl. Phys. 38 (1999) L1000.