Electronic properties of nonpolar cubic GaN MOS structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1988-1990

  As, D J ^a   Pottgen H ^a   Tschumak, E ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Electrical properties; GaN; MBE; Metal oxide semiconductor junctions

Indexed keywords

C-V CURVE; ELECTRIC CHARACTERISTICS; ELECTRICAL PROPERTY; FREQUENCY CURVE; GAN; INTERFACE STATE DENSITY; INTERFACE TRAPS; MBE; METAL-OXIDE- SEMICONDUCTORCAPACITORS; METAL-OXIDE-SEMICONDUCTOR JUNCTIONS; MOS STRUCTURE; NON-POLAR; PEAK HEIGHT;

DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; MOS CAPACITORS;

SEMICONDUCTOR JUNCTIONS;

EID: 77955805560     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983600     Document Type: Conference Paper

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