GaN growth on LiNbO3 (0001) - A first-principles simulation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2272-2274

  Sanna, Simone ^a   Schmidt, Wolf Gero ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Ab initio calculations; Adsorption; GaN; Growth; Solid surface

Indexed keywords

ADSORPTION; ATOMS; CALCULATIONS; GALLIUM; GALLIUM NITRIDE; GROWTH (MATERIALS); III-V SEMICONDUCTORS; LATTICE MISMATCH; MORPHOLOGY; NITRIDES; POTENTIAL ENERGY; QUANTUM CHEMISTRY; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

AB INITIO CALCULATIONS; EPITAXIAL RELATIONSHIPS; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; FIRST-PRINCIPLES SIMULATIONS; LAYER-BY-LAYER GROWTH; MICROSCOPIC MODELING; SOLID SURFACE; SUBSTRATE MORPHOLOGIES;

NIOBIUM COMPOUNDS;

EID: 77955791195     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983649     Document Type: Conference Paper

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