Effects of low-temperature-grown buffers on pulsed-laser deposition of GaN on LiNbO3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 6, 2006, Pages 2021-2024

  Tsuchiya, Y ^a   Oshima, M ^a   Kobayashi, A ^b   Ohta, J ^b,c   Fujioka, H ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INTEGRATED CIRCUITS; LITHIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; SINGLE CRYSTALS;

FLAT SURFACES; LOW-TEMPERATURE-GROWN (LTG); MOSAICITIES; ROOT-MEAN-SQUARE SURFACE ROUGHNESS;

GALLIUM NITRIDE;

EID: 33750938861     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2345644     Document Type: Article

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