Optical properties of GaN/AlN multiple quantum wells

Solid State Communications

Volumn 131, Issue 6, 2004, Pages 389-392

  Lin, T Y ^a   Sheu, Y M ^b   Chen, Y F ^b   Lin, J Y ^c   Jiang, H X ^c  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c KANSAS STATE UNIVERSITY   (United States)

Author keywords

A. Quantum wells; E. Photoluminescence; E. Strain

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL LATTICES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; RAMAN SCATTERING; STRAIN; THERMAL EXPANSION;

COMPRESSIVE STRAIN; LATTICE MISMATCHES; MULTIPLE QUANTUM WELLS (MQW); STRAIN EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3042837731     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.05.036     Document Type: Article

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