Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect

Quantum Electronics

Volumn 39, Issue 6, 2009, Pages 501-504

  Eliseev, P G ^a   Ukhanov, A ^a   Shtints, A ^a   Malloy, K J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Current voltage characteristics; Differential resistance; Laser heterostructure; Quantum dots

Indexed keywords

CURRENT VOLTAGE; DIFFERENTIAL CURRENT; DIFFERENTIAL RESISTANCE; DIFFERENTIAL RESISTANCES; ELECTRICAL PROPERTY; HETEROSTRUCTURES; INAS QUANTUM DOTS; INAS/INGAAS; INGAAS/GAAS; LASER STRUCTURES; LASING THRESHOLD; QUANTUM DOT LASERS; QUANTUM DOTS; QUANTUM WELL; THRESHOLD EFFECT;

ELECTRIC PROPERTIES; HETEROJUNCTIONS; INDIUM ARSENIDE; LASERS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350244699     PISSN: 10637818     EISSN: None     Source Type: Journal    
DOI: 10.1070/QE2009v039n06ABEH013978     Document Type: Article

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