Electrical shorting propensity of tin whiskers

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 33, Issue 3, 2010, Pages 205-211

  Han, Sungwon ^a   Osterman, Michael ^a   Pecht, Michael G ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Breakdown voltage; contact force; electrical short; tin oxide; tin whisker

Indexed keywords

BREAKDOWN VOLTAGE; CONTACT FORCES; CRITICAL FACTORS; CURRENT FLOWS; CURRENT VOLTAGE; ELECTRICAL SHORT; FIELD-EMISSION TRANSMISSION ELECTRON MICROSCOPIES; MULTIPLE TRANSITIONS; NON-CONDUCTIVE FILM; OXIDE LAYER; PHYSICAL CONTACTS; SEMICONDUCTOR PARAMETER ANALYZERS; TEM; THRESHOLD LEVELS; TIN WHISKER; TUNGSTEN PROBES;

CRYSTAL WHISKERS; ELECTRIC BREAKDOWN; FIELD EMISSION; GOLD COATINGS; PROBES; TIN; TIN OXIDES; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955715487     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2010.2053377     Document Type: Conference Paper

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