Use of highly reflective ohmic contact and surface KrF laser roughening to improve light output of vertical gan-based light-emitting diodes

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 141-142

  Lee, Wei Chi ^a   Uang, Kai Ming ^b   Kuo, Der Ming ^a   Chou, Jui Chiang ^a   Chen, Tron Min ^b   Kuo, Hon Yi ^a   Wang, Shui Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SIZES; FORWARD VOLTAGES; GAN LAYERS; GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; HIGH REFLECTIVITIES; HIGH-POWER; KRF EXCIMER LASERS; KRF LASERS; LASER LIFT-OFFS; LIGHT OUTPUT POWER; LIGHT OUTPUTS; METAL SYSTEMS; OPTO-ELECTRONIC PROPERTIES; SURFACE-ROUGHENING; THERMAL-ANNEALING; TRANSPARENT CONDUCTION LAYERS;

CORUNDUM; CURRENT DENSITY; ELECTRIC CONTACTORS; EXCIMER LASERS; GALLIUM NITRIDE; GAS LASERS; INDUCTIVELY COUPLED PLASMA; KRYPTON; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; OHMIC CONTACTS; ORGANIC LIGHT EMITTING DIODES (OLED); REFLECTION; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 64849111007     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800774     Document Type: Conference Paper

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