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Volumn 518, Issue 18, 2010, Pages 5311-5320

Comparison of p-channel transistors based on α,ω-hexyl- distyryl-bithiophene prepared using various film deposition methods

(11) Didane, Y a Martini, C a Barret, M b Sanaur, S b Collot, P b Ackermann, J a Fages, F a Suzuki, A c Yoshimoto, N c Brisset, H a Videlot Ackermann, C a

a AIX MARSEILLE UNIVERSITÉ (France)

b Center Microelectronics De Provence Georges Charpak (France)

c IWATE UNIVERSITY (Japan)

Author keywords

Morphology; Optical microscopy; Organic semiconductor; Thin film; Transport; X ray diffraction

Indexed keywords

ACTIVE LAYER; BITHIOPHENES; CHANNEL LENGTH; CHANNEL TRANSISTORS; CHARGE TRANSPORT; COMPARATIVE ANALYSIS; DEPOSITION METHODS; DEVICE PERFORMANCE; DROP CASTING; FILM DEPOSITION; HOLE TRANSPORTING; INK-JET PRINTING; KEY FACTORS; MACROSCOPIC SCALE; MEASUREMENT CONDITIONS; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTOR DEVICES; POST TREATMENT; SMALL MOLECULES; STRUCTURE AND MORPHOLOGY; SYSTEMATIC STUDY; TRANSPORT;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; FIELD EFFECT TRANSISTORS; MORPHOLOGY; OPTICAL DATA STORAGE; OPTICAL INSTRUMENTS; OPTICAL MICROSCOPY; THIN FILMS; VACUUM EVAPORATION; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAYS;

THIN FILM TRANSISTORS;

EID: 77955659800 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.079 Document Type: Article

Times cited : (10)

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