Cap layer and grain size effects on electromigration reliability in Cu/low-k interconnects

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Zhang, L ^a   Kraatz, M ^a   Aubel, O ^b   Hennesthal, C ^b   Im, J ^a   Zschech, E ^c   Ho, P S ^a  

^a The University of Texas at Austin   (United States)

^b GLOBALFOUNDRIES   (Germany)

^c FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

45NM TECHNOLOGY; CAP LAYERS; CU LINES; CU-INTERCONNECTS; CU/LOW-K INTERCONNECTS; ELECTROMIGRATION RELIABILITY; EXPERIMENTAL OBSERVATION; GRAIN SIZE; GRAIN SIZE EFFECT; GRAIN STRUCTURES; RESISTANCE INCREASE; SMALL GRAINS; STATISTICAL SIMULATION; VOID FORMATION;

COBALT COMPOUNDS; CRYSTAL MICROSTRUCTURE; ELECTROMIGRATION; FAILURE MODES; GRAIN SIZE AND SHAPE; MAGNETIC THIN FILMS; MONTE CARLO METHODS; RELIABILITY;

QUALITY ASSURANCE;

EID: 77955605655     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510581     Document Type: Conference Paper

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