High-breakdown-voltage GaN vertical schottky barrier diodes with field plate structure

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 963-966

  Horii, Taku ^a   Miyazaki, Tomihito ^a   Saito, Yu ^a   Hashimoto, Shin ^a   Tanabe, Tatsuya ^a   Kiyama, Makoto ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Field plate; GaN; SBD; Vertical structure

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PLATES (STRUCTURAL COMPONENTS); SILICON CARBIDE; SUBSTRATES;

FIELD PLATES; FIELD-PLATE STRUCTURES; GALLIUM NITRIDES (GAN); HIGH BREAKDOWN VOLTAGE; LOW-DISLOCATION DENSITY; SCHOTTKY BARRIER DIODES (SBDS); SPECIFIC-ON RESISTANCE; VERTICAL STRUCTURES;

SCHOTTKY BARRIER DIODES;

EID: 77955494834     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.963     Document Type: Conference Paper

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