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Volumn 87, Issue 11, 2010, Pages 2158-2162
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60Co gamma irradiation effects on electrical characteristics of Al/Y2O3/n-Si/Al capacitors
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Author keywords
Gamma irradiation; MOS structure; Thermal annealing; Yttrium oxide
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Indexed keywords
ANNEALING TREATMENTS;
CAPACITANCE VOLTAGE;
CRYSTALLINE STATE;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL PROPERTY;
FLAT-BAND VOLTAGE;
GAMMA IRRADIATION;
GAMMA RAY SOURCES;
HIGH FREQUENCY HF;
INTERFACE TRAPS;
MOS STRUCTURE;
QUASI-STATIC;
SILICATE LAYERS;
THERMAL-ANNEALING;
THIN FILM MATERIAL;
XRD;
ANNEALING;
CAPACITANCE;
CAPACITORS;
CRYSTALLINE MATERIALS;
IRRADIATION;
MOS CAPACITORS;
RAMAN SPECTROSCOPY;
SILICATES;
THIN FILMS;
YTTRIUM;
YTTRIUM ALLOYS;
YTTRIUM OXIDE;
GAMMA RAYS;
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EID: 77955496637
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2010.01.018 Document Type: Article |
Times cited : (9)
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References (23)
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