New insights into acidic wet chemical silicon etching by HF/H 2ONOHSO4H2SO4 solutions

Materials Science in Semiconductor Processing

Volumn 13, Issue 2, 2010, Pages 71-79

  Patzig Klein, Sebastian ^a   Roewer, Gerhard ^a   Kroke, Edwin ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Chemical techniques; Etching; Semiconductors

Indexed keywords

AMMONIUM IONS; CHEMICAL TECHNIQUES; CONCENTRATION-DEPENDENT; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; DIFFUSION CONTROLLED; ETCHING PROCESS; ETCHING RATE; ION CONCENTRATIONS; ION CONTENT; NMR AND RAMAN SPECTROSCOPY; POLY-CRYSTALLINE SILICON; QUALITATIVE ANALYSIS; RATE-LIMITING STEPS; RELEVANT REACTIONS; SILICON DISSOLUTION; SILICON ETCHING; SOLUTION ANALYSIS; WET CHEMICALS; WET-CHEMICAL ETCHING;

ACTIVATION ENERGY; AMMONIUM COMPOUNDS; CRYSTALLINE MATERIALS; DISSOLUTION; ION CHROMATOGRAPHY; IONS; POLYSILICON; QUALITY CONTROL; RAMAN SPECTROSCOPY; REACTION KINETICS;

WET ETCHING;

EID: 77955471095     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.03.001     Document Type: Article

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