Characterization of MBE grown ZnO on GaAs(111) substrates

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 984-987

  Matsumoto, Takashi ^a   Nishimura, Kazuto ^a   Nishii, Akito ^a   Ota, Atsuya ^a   Nabetani, Yoichi ^a   Kato, Takamaga ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; X RAY DIFFRACTION; ZINC OXIDE; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

EPITAXIAL ORIENTATION; RECIPROCAL LATTICE MAPPING; ZNO EPITAXIAL LAYERS;

MOLECULAR BEAM EPITAXY; ZINC OXIDE;

61.10.NZ; 68.55.JK; 78.55.ET; 81.15.HI; EPITAXIAL ORIENTATION RELATIONSHIP; LOW TEMPERATURES; PLASMA ASSISTED MBE; RECIPROCAL LATTICE MAPPING;

EID: 33646188320     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564645     Document Type: Conference Paper

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