Surface step model for micropipe formation in SiC

Journal of Crystal Growth

Volumn 226, Issue 2-3, 2001, Pages 254-260

  Ohtani, Noboru ^a   Katsuno, Masakazu ^a   Fujimoto, Tatsuo ^a   Aigo, Takashi ^a   Yashiro, Hirokatsu ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

A1. Defects; A1. Morphological stability; A1. Surface structure; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SURFACE STRUCTURE;

MICROPIPE FORMATION; MORPHOLOGICAL STABILITY;

SILICON CARBIDE;

EID: 0035365946     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01387-2     Document Type: Article

References (17)