Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates

Inorganic Materials

Volumn 42, Issue 8, 2006, Pages 830-834

  Georgobiani, A N ^a   Rogozin, I V ^b   Kotlyarevsky, M B ^c  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^c Academy of Management and Technology   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33748772549     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168506080048     Document Type: Article

References (14)

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