An effective switching-off mechanism for high-performance carbon nanotube field-effect transistors

Journal of Nanoelectronics and Optoelectronics

Volumn 5, Issue 1, 2010, Pages 26-29

  Xiao, Z ^a   Camino, F E ^b  

^a ALABAMA A AND M UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Carbon nanotube field effect transistors (CNTFETs); Junction field effect transistors (JFETs); Single Walled carbon nanotubes (SWCNTs)

Indexed keywords

BENEFICIAL EFFECTS; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL JUNCTIONS; DRAIN-SOURCE CURRENTS; DRAIN-SOURCE VOLTAGE; GATE VOLTAGES; JUNCTION FIELD-EFFECT TRANSISTORS; JUNCTION FIELD-EFFECT TRANSISTORS (JFETS); NORMALLY ON; P-TYPE; SOURCE AND DRAINS;

CARBON NANOTUBES; DRAIN CURRENT; METAL REFINING; NANOSENSORS; PLATINUM; SEMICONDUCTOR JUNCTIONS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 77955344244     PISSN: 1555130X     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2010.1058     Document Type: Article

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