The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials

Nanotechnology

Volumn 20, Issue 13, 2009, Pages

  Xiao, Z ^a   Camino, F E ^b  

^a ALABAMA A AND M UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DIELECTROPHORESIS; DRAIN-SOURCE CURRENTS; DRAIN-SOURCE VOLTAGES; FABRICATION PROCESS; I - V CURVES; INTEGRATED DEVICES; METAL OXIDES; N-METHYL PYRROLIDONE; P TYPES; SEMICONDUCTOR CONTACTS; SOURCE AND DRAINS;

DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTROPHORESIS; FABRICATION; FIELD EFFECT TRANSISTORS; METAL REFINING; NANOSENSORS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

CARBON NANOTUBE; PYRROLIDINE DERIVATIVE; SINGLE WALLED NANOTUBE; SOLVENT;

ARTICLE; DISPERSION; DRAIN; ELECTRIC POTENTIAL; ELECTROPHORESIS; ENERGY RESOURCE; FIELD EFFECT TRANSISTOR; NANOFABRICATION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 65549105652     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/13/135205     Document Type: Article

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