Fabrication of a highly dense line patterned polystyrene brush on silicon surfaces using very large scale integration processing

Journal of Physical Chemistry C

Volumn 114, Issue 27, 2010, Pages 11801-11809

  Chen, Jem Kun ^a   Zhuang, Ai Ling ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEACTIVATION RATE; DUTY RATIOS; FABRICATION PROCESS; FRICTION COEFFICIENTS; HIGHLY DENSE; LINE PATTERN; NUMBER-AVERAGE; OXYGEN PLASMA TREATMENTS; OXYGEN PLASMAS; POLYMERIZATION KINETICS; PROPAGATION RATE; SI SURFACES; SI(100) SURFACE; SILICON SURFACES; SURFACE GRAFTING POLYMERIZATION; SWITCHING PROPERTIES; TRENCH PATTERNS; VERY LARGE-SCALE INTEGRATION;

CHROMATOGRAPHIC ANALYSIS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FRICTION; GELS; LSI CIRCUITS; OXYGEN; PLASMA APPLICATIONS; POLYMERIZATION; POLYSTYRENES; TOLUENE;

SILICON;

EID: 77955316857     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp103258n     Document Type: Article

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