Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

Journal of Luminescence

Volumn 130, Issue 8, 2010, Pages 1425-1430

  Babentsov, V ^a   Boiko, V ^a   Schepelskii, G A ^a   James, R B ^b   Franc, J ^c   Prochzka, J ^c   Hldek, P ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CHARLES UNIVERSITY   (Czech Republic)

Author keywords

CdTe; Deep levels; Photoconductivity; Photoluminescence

Indexed keywords

CDTE; CDZNTE CRYSTALS; CHARGE COLLECTION; CONTACT LESS; DEEP LEVEL; DEEP LEVELS; DEGRADED PERFORMANCE; DISLOCATION AREA; DISLOCATION DENSITIES; ELECTRONIC LEVELS; ETCH PIT DENSITY; GAMMA RAY DETECTOR; INDENTERS; INDUCED DEFECTS; INFRARED PHOTOLUMINESCENCE; SEMI-INSULATING;

CADMIUM COMPOUNDS; DEFECTS; DEFORMATION; DISLOCATIONS (CRYSTALS); GAMMA RAYS; PHOTOCONDUCTIVITY; PHOTODEGRADATION; PHOTOLUMINESCENCE; RADIATION DETECTORS; TELLURIUM COMPOUNDS; ZINC;

CADMIUM ALLOYS;

EID: 77955229167     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2010.03.006     Document Type: Article

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