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Volumn 4507, Issue , 2001, Pages 264-272

Evidence for dislocations or related defects present in CdTe and Cd1-xZnxTe crystals

Author keywords

Cd1 xZnxTe; CdTe; Dislocation; Intrinsic defects; TEES

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENT MEASUREMENT; HEATING; INGOTS; IONIZATION; SPECTROSCOPIC ANALYSIS; THERMOELECTRICITY;

EID: 0035767036     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.450770     Document Type: Article
Times cited : (18)

References (11)
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    • Pierret, R.F.1
  • 6
    • 36549099600 scopus 로고
    • Thermoelectric effects spectroscopy of deep levels-application to semi-insulating GaAs
    • B. Santic, and U.V. Desnica, "Thermoelectric effects spectroscopy of deep levels-Application to semi-insulating GaAs," Applied physical letters, 56, 2636-2638, 1990.
    • (1990) Applied physical letters , vol.56 , pp. 2636-2638
    • Santic, B.1    Desnica, U.V.2
  • 7
    • 0001146094 scopus 로고
    • A simple and reliable method of thermoelectric effect spectroscopy for semi-insulating II-VI semiconductors
    • Z.C. Huang, K. Xie, and C.R. Wie, "A simple and reliable method of thermoelectric effect spectroscopy for semi-insulating II-VI semiconductors," Rev. Sci. instrum., 62, 1951-1954, 1991.
    • (1991) Rev. Sci. instrum. , vol.62 , pp. 1951-1954
    • Huang, Z.C.1    Xie, K.2    Wie, C.R.3
  • 10
    • 0000010683 scopus 로고
    • Effect of deep levels on semiconductor carrier concentrations in the case of strong compensation
    • G.F. Neumark, "effect of deep levels on semiconductor carrier concentrations in the case of strong compensation," Physical Review B, vol. 26, 2250-2252, 1982.
    • (1982) Physical Review B , vol.26 , pp. 2250-2252
    • Neumark, G.F.1
  • 11
    • 84994818974 scopus 로고    scopus 로고
    • Sandia National Laboratories, Unpublished progress report
    • F.P. Doty, Sandia National Laboratories, Unpublished progress report.
    • Doty, F.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.