Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Kim, Taeseok ^a   Pillai, Manoj R ^b   Aziz, Michael J ^b   Scarpulla, Michael A ^c   Dubon, Oscar D ^d   Yu, Kin M ^e   Beeman, Jeffrey W ^e   Ridgway, Mark C ^f  

^a SunPower Corporation   (United States)

^b HARVARD UNIVERSITY   (United States)

^c University of Utah   (United States)

^d University of California Berkeley   (United States)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^f AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC SEMICONDUCTOR; GAAS; HEAT-FLOW MODELS; ION IMPLANTED; LASER FLUENCES; LASER MELTING; LATENT HEAT OF FUSION; LIQUID PHASIS; MELT DEPTH; MELTING TEMPERATURES; NUMERICAL SOLUTION; ONE-DIMENSIONAL HEAT; PULSED LASER; SKIN DEPTH; SOLIDIFICATION VELOCITY; TEMPERATURE-DEPENDENT THERMAL CONDUCTIVITY; THERMOPHYSICAL; TIME-RESOLVED REFLECTIVITIES;

CRYSTALLINE MATERIALS; CRYSTALLIZATION; GALLIUM ARSENIDE; LATENT HEAT; MANGANESE; MANGANESE COMPOUNDS; MATERIALS PROPERTIES; MELTING; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; PULSED LASER APPLICATIONS; PULSED LASERS; RAPID SOLIDIFICATION; REFLECTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY; THERMOANALYSIS;

GALLIUM ALLOYS;

EID: 77955217913     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457106     Document Type: Article

References (54)

1. D. H. Lowndes and R. F. Wood, Appl. Phys. Lett. APPLAB 0003-6951 38, 971 (1981). 10.1063/1.92239
2. D. E. Davies, J. P. Lorenzo, and T. G. Ryan, Appl. Phys. Lett. APPLAB 0003-6951 37, 612 (1980). 10.1063/1.92037
3. J. Fletcher, J. Narayan, and D. H. Lowndes, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 2, 421 (1981).
4. J. S. Williams, R. G. Elliman, W. L. Brown, and T. E. Seidel, Phys. Rev. Lett. PRLTAO 0031-9007 55, 1482 (1985). 10.1103/PhysRevLett.55.1482
5. D. H. Lowndes, R. F. Wood, and J. Narayan, Phys. Rev. Lett. PRLTAO 0031-9007 52, 561 (1984). 10.1103/PhysRevLett.52.561
6. J. S. Williams and H. B. Harrison, in Laser and Electron-Beam Solid Interactions, edited by, L. D. H. J. F. Gibbons, and, T. W. Sigmon, (Elsevier/North-Holland, New York/Amsterdam, 1981), pp. 209-222.
7. J. W. Ager and W. Walukiewicz, Semicond. Sci. Technol. SSTEET 0268-1242 17, 741 (2002). 10.1088/0268-1242/17/8/301
8. K. Uesugi, N. Morooka, and I. Suemune, Appl. Phys. Lett. APPLAB 0003-6951 74, 1254 (1999). 10.1063/1.123516
9. M. Kondow, K. Uomi, K. Hosomi, and T. Mozume, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 33, L1056 (1994). 10.1143/JJAP.33.L1056
10. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science SCIEAS 0036-8075 294, 1488 (2001). 10.1126/science.1065389 (Pubitemid 33063913)
11. S. A. Wolf, A. Y. Chtchelkanova, and D. M. Treger, IBM J. Res. Dev. IBMJAE 0018-8646 50, 101 (2006). 10.1147/rd.501.0101
12. G. A. Prinz, Science SCIEAS 0036-8075 282, 1660 (1998). 10.1126/science.282.5394.1660
13. H. Ohno, Science SCIEAS 0036-8075 281, 951 (1998). 10.1126/science.281. 5379.951
14. P. R. Stone, M. A. Scarpulla, R. Farshchi, I. D. Sharp, E. E. Haller, O. D. Dubon, K. M. Yu, J. W. Beeman, E. Arenholz, J. D. Denlinger, and H. Ohldag, Appl. Phys. Lett. APPLAB 0003-6951 89, 012504 (2006). 10.1063/1.2219713 (Pubitemid 44026440)
15. M. J. Aziz, Metall. Mater. Trans. A MMTAEB 1073-5623 27, 671 (1996). 10.1007/BF02648954
16. M. A. Scarpulla, U. Daud, K. M. Yu, O. Monteiro, Z. Liliental-Weber, D. Zakharov, W. Walukiewicz, and O. D. Dubon, Physica B PHYBE3 0921-4526 340-342, 908 (2003). 10.1016/j.physb.2003.09.113
17. M. A. Scarpulla, O. D. Dubon, K. M. Yu, O. Monteiro, M. R. Pillai, M. J. Aziz, and M. C. Ridgway, Appl. Phys. Lett. APPLAB 0003-6951 82, 1251 (2003). 10.1063/1.1555260
18. M. A. Scarpulla, B. L. Cardozo, R. Farshchi, W. M. Hlaing Oo, M. D. McCluskey, K. M. Yu, and O. D. Dubon, Phys. Rev. Lett. PRLTAO 0031-9007 95, 207204 (2005). 10.1103/PhysRevLett.95.207204 (Pubitemid 41782102)
19. O. D. Dubon, M. A. Scarpulla, R. Farshchi, and K. M. Yu, Physica B PHYBE3 0921-4526 376-377, 630 (2006). 10.1016/j.physb.2005.12.159
20. K. M. Yu, W. Walukiewicz, M. A. Scarpulla, O. D. Dubon, J. Wu, J. Jasinski, Z. Liliental-Weber, J. W. Beeman, M. R. Pillai, and M. J. Aziz, J. Appl. Phys. JAPIAU 0021-8979 94, 1043 (2003). 10.1063/1.1582393
21. M. Scarpulla, R. Farshchi, P. R. Stone, R. V. Chopdekar, K. M. Yu, Y. Suzuki, and O. D. Dubon, J. Appl. Phys. JAPIAU 0021-8979 103, 073913 (2008). 10.1063/1.2890411 (Pubitemid 351538016)
22. J. M. Poate, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 4, 121 (1982).
23. P. Baeri, Mater. Sci. Eng., A MSAPE3 0921-5093 178, 179 (1994). 10.1016/0921-5093(94)90539-8
24. M. von Allmen and A. Blatter, Laser-Beam Interactions with Materials: Physical Principles and Applications, 2nd ed. (Springer, Berlin, 1995).
25. C. W. White, B. R. Appleton, and S. R. Wilson, in Laser Annealing of Semiconductors, edited by, J. M. Poate, and, J. W. Mayer, (Academic, New York, 1982), pp. 112-145.
26. C. W. White, in Pulsed Laser Processing of Semiconductors, edited by, R. F. Wood, C. W. White, and, R. T. Young, (Academic, Orlando, 1984), pp. 44-92.
27. C. W. White, S. R. Wilson, B. R. Appleton, and F. W. Young, J. Appl. Phys. JAPIAU 0021-8979 51, 738 (1980). 10.1063/1.327334 (Pubitemid 11432650)
28. T. Kim, M. J. Aziz, and V. Narayanamurti, Appl. Phys. Lett. APPLAB 0003-6951 93, 102117 (2008). 10.1063/1.2982424
29. T. Kim, K. Alberi, O. D. Dubon, M. J. Aziz, and V. Narayanamurti, J. Appl. Phys. JAPIAU 0021-8979 104, 113722 (2008). 10.1063/1.3041154
30. J. A. Kittl, P. G. Sanders, M. J. Aziz, D. P. Brunco, M. O. Thompson, Acta Mater. ACMAFD 1359-6454 48, 4797 (2000). 10.1016/S1359-6454(00)00276-7 (Pubitemid 32034616)
31. P. Baeri and S. U. Campisano, in Laser Annealing of Semiconductors, edited by, J. M. Poate, and, J. W. Mayer, (Academic, London, 1982), p. 75.
32. D. E. Hoglund, M. O. Thompson, and M. J. Aziz, Phys. Rev. B PRBMDO 0163-1829 58, 189 (1998). 10.1103/PhysRevB.58.189
33. D. Turnbull, in Thermodynamics in Physical Metallurgy (American Society for Metals, Cleveland, 1950), pp. 282-306.
34. J. Solis, C. N. Afonso, and J. Piqueras, J. Appl. Phys. JAPIAU 0021-8979 71, 1032 (1992). 10.1063/1.350391
35. J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, J. Appl. Phys. JAPIAU 0021-8979 56, 1821 (1984). 10.1063/1.334192 (Pubitemid 14649112)
36. M. O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, J. M. Poate, D. C. Jacobson, A. G. Cullis, and N. G. Chew, Phys. Rev. Lett. PRLTAO 0031-9007 52, 2360 (1984). 10.1103/PhysRevLett.52.2360
37. M. R. Brozel and G. E. Stillman, Properties of Gallium Arsenide, 3rd ed., EMIS Data Reviews Series No. 16 (INSPEC-The Institution of Electrical Engineers, London, 1996).
38. J. S. Blakemore, J. Appl. Phys. JAPIAU 0021-8979 53, R123 (1982). 10.1063/1.331665
39. A. S. Jordan, J. Cryst. Growth JCRGAE 0022-0248 71, 551 (1985). 10.1016/0022-0248(85)90361-6
40. R. O. Carlson, G. A. Slack, and S. J. Silverman, J. Appl. Phys. JAPIAU 0021-8979 36, 505 (1965). 10.1063/1.1714018
41. S. Nakamura and T. Hibiya, Int. J. Thermophys. IJTHDY 0195-928X 13, 1061 (1992). 10.1007/BF01141216
42. A. M.-T. Kim, J. P. Callan, C. A. D. Roeser, and E. Mazur, Phys. Rev. B PRBMDO 0163-1829 66, 245203 (2002). 10.1103/PhysRevB.66.245203
43. R. Zallen, The Physics of Amorphous Solids (Wiley, New York, 1983). 10.1002/3527602798
44. S. Roorda, W. C. Sinke, J. M. Poate, D. C. Jacobson, S. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen, and P. Fuoss, Phys. Rev. B PRBMDO 0163-1829 44, 3702 (1991). 10.1103/PhysRevB.44.3702
45. T. Kim, Electrical and Optical Characterization and Nanoscale Patterning of Gallium Nitrogen Arsenide Synthesized by Energetic Beams (Harvard University, Cambridge, 2008).
46. J. Stuke and G. Zimmerer, Phys. Status Solidi B PSSBBD 0370-1972 49, 513 (1972). 10.1002/pssb.2220490213
47. H. C. Webber, A. C. Cullis, and N. G. Chew, Appl. Phys. Lett. APPLAB 0003-6951 43, 669 (1983). 10.1063/1.94440
48. D. Cahill, H. E. Fischer, T. Klitsner, E. T. Swartz, and R. O. Pohl, J. Vac. Sci. Technol. A JVTAD6 0734-2101 7, 1259 (1989). 10.1116/1.576265
49. R. Reitano, P. M. Smith, and M. J. Aziz, J. Appl. Phys. JAPIAU 0021-8979 76, 1518 (1994). 10.1063/1.357728
50. D. M. Hsieh, J. Y. Wang, and A. Y. G. Fuh, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 36, L455 (1997). 10.1143/JJAP.36.L455
51. B. J. Keay, M. Mendenhall, and G. S. Edwards, Phys. Rev. B PRBMDO 0163-1829 60, 10898 (1999). 10.1103/PhysRevB.60.10898
52. M. O. Thompson, J. W. Mayer, A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate, and D. C. Jacobson, Phys. Rev. Lett. PRLTAO 0031-9007 50, 896 (1983). 10.1103/PhysRevLett.50.896
53. P. A. Barnes, H. J. Leamy, J. M. Poate, S. D. Ferris, J. S. Williams, and G. K. Celler, Appl. Phys. Lett. APPLAB 0003-6951 33, 965 (1978). 10.1063/1.90237
54. M. A. Scarpulla, III-Mn-V Ferromagnetic Semiconductor Synthesized by Ion Implantation and Pulsed-Laser-Melting (University of California, Berkeley, 2006).