Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Kim, Taeseok ^a   Alberi, Kirstin ^b   Dubon, Oscar D ^c,d   Aziz, Michael J ^a   Narayanamurti, Venkatesh ^a  

^a HARVARD UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c University of California Berkeley   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; ENERGY GAP; ION BOMBARDMENT; ION IMPLANTATION; LASER PULSES; METALLIC COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITROGEN; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR METAL BOUNDARIES; SURFACE DIFFUSION;

BALLISTIC ELECTRON EMISSION MICROSCOPIES; BAND ANTICROSSING; BANDGAP ENERGIES; BANDGAP NARROWING; COMPOSITION DEPENDENCES; CONCENTRATION DEPTH PROFILES; LIQUID-PHASE DIFFUSIONS; NITROGEN COMPOSITIONS; NITROGEN ION IMPLANTATIONS; PHOTOMODULATED REFLECTANCES; ROOM TEMPERATURES; SCHOTTKY BARRIER HEIGHTS; SOLIDIFICATION FRONTS; SOLUTE TRAPPING; SURFACE EVAPORATIONS; SYSTEMATIC INVESTIGATIONS;

SCHOTTKY BARRIER DIODES;

EID: 58149217972     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041154     Document Type: Article

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