Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 908-912

  Scarpulla, M A ^a,b,c   Daud, U ^a,b   Yu, K M ^b   Monteiro, O ^b   Liliental Weber, Z ^b   Zakharov, D ^b   Walukiewicz, W ^b   Dubon, O D ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

Author keywords

Diluted magnetic semiconductor; GaMnAs; GaMnP; Ion implantation; Laser processing

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; FERROMAGNETISM; HYSTERESIS; ION IMPLANTATION; LASER PULSES; MAGNETIZATION; MELTING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; STRAIN; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

CURIE TEMPERATURE; LASER PROCESSING; RAPID THERMAL ANNEALING (RTA);

MAGNETIC SEMICONDUCTORS;

EID: 0346055257     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.113     Document Type: Conference Paper

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