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Volumn 93, Issue 10, 2008, Pages

Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; METALLIC COMPOUNDS; MOLECULAR DYNAMICS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; WATER POLLUTION;

EID: 51749093953     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2982424     Document Type: Article
Times cited : (5)

References (16)
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    • Narayanamurti, V.1    Kozhevnikov, M.2
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    • Bell, L.D.1    Kaiser, W.J.2
  • 16
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    • 0163-1829 10.1103/PhysRevB.54.10354.
    • D. L. Smith and S. M. Kogan, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54. 10354 54, 10354 (1996).
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    • Smith, D.L.1    Kogan, S.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.