Vertical metal interconnect thanks to tungsten direct bonding

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 1359-1363

  Di Cioccio, Léa ^a   Gueguen, Pierric ^a   Grouiller, Etienne ^a   Vandroux, Laurent ^a   Delaye, Vincent ^a   Rivoire, Maurice ^b   Lugand, Jean François ^b   Clavelier, Laurent ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3D TECHNOLOGY; BONDING MECHANISM; DIRECT BONDING; METAL BONDING; TEMPERATURE DEPENDENCE; VERTICAL INTERCONNECTIONS;

TECHNOLOGICAL FORECASTING;

TUNGSTEN;

EID: 77955206272     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490643     Document Type: Conference Paper

References (15)

1. ww.semiconductor.net/blog/perspectives-From-the-leading-edge.
2. L. Di Cioccio, P. Gueguen et al, "3D Technologies at CEA-Leti Minatec", IMAPS proc. (2008).
3. P. Gueguen, C. Ventosa, L. Di Cioccio et al, "Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration", Microelectronics Engineering (2009), DOI: 10.1016/j.mee.2009.07.030.
4. J. B. Lasky, Appl. Phys. Lett. 48, 78 (1986.
5. M. Bruel, Electron. Lett. 31, 1201 (1995).
6. Q.Y. Tong and U. Gosele, Semiconductor wafer bonding: Science and Technology, (Wiley, New York, 1999).
7. R. H. Esser, K. D. Hobart and F. J. Kub, J. Electrochem. Soc, 150, 3, G228-G231 (2003).
8. C.S.Tan, K.N.Chen et al, "Low temperature Direct CVD Oxides to Thermal Oxide Wafer Bonding in Silicon Layer Transfer" Electrochem. Solid State Lett. 8 (2005).
9. R.Singh, I. Radu et al, "High density plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicontransfer applications", J. Surf. Sc, 253, 3595-3599 (2007).
10. W.P.Maszara et al, J. Appl. Phys. 64 (10), 4943-4950. (1988).
11. R. Tadepalli, K.T.Turner, C.V.Thompson, " Mixed-mode interface toughness of wafer-level Cu-Cu bonds using asymmetric chevron test", J Mech Phys Solids, Vol56, iss 3, p707-718 (2007).
12. P. Gueguen, L. Di Cioccio et al, "Physics of Direct MetalBonding: Applications to 3D Integration", Wafer Bond conference proceedings. (2009).
13. A. Munir, "Analytical treatment of the role of surface oxide layers in the sintering of metals"J. Mater. Sci. 14, 2733(1979).
14. K. Diest, M. J. Archer et al, "Silver diffusion bondingand layer transfer of lithium niobate to silicon", Ap. Phys. Let. 93, 092906 (2008).
15. D. L. Cocke, G. K. Chuah et al, "Copper oxidation andsurface copper oxide stability investigated by pulsed fielddesorption mass spectrometry", Ap. Surf. Scien.84; 153- 161 (1995).