SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 1, 2010, Pages

The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

(8) Borrero Gonzalez L J a Nunes, L A O a Andreeta, M R B a Wojcik, J b Mascher, P b Pusep, Y A a Comedi, D c Guimaraes F E G a

a UNIVERSITY OF SÃO PAULO (Brazil)

b MCMASTER UNIVERSITY (Canada)

c UNIVERSIDAD NACIONAL DE TUCUMÁN (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; ANNEALING TEMPERATURES; CRYSTALLINE SI; CRYSTALLINE STRUCTURE; DECAY RATE; DECOHERENCE; EMISSION-ENERGY DEPENDENCE; ENERGY DISPERSIONS; ENERGY DISPERSIVE; EXCITON LOCALIZATION; GAS ATMOSPHERE; NON-RADIATIVE RECOMBINATIONS; RAMAN SCATTERING MEASUREMENTS; ROOM TEMPERATURE; SI NANOCLUSTER; SI OXIDE; SILICON NANOCLUSTERS; THERMAL-ANNEALING;

CRYSTALLINE MATERIALS; DECAY (ORGANIC); NANOCLUSTERS; QUANTUM CONFINEMENT;

AMORPHOUS SILICON;

EID: 77955200076 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457900 Document Type: Article

Times cited : (17)

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