Fabrication and characterization of GaAs MOS capacitor with CVD grown polymer-based thin film as a gate dielectric

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1942-1947

  Oulachgar, El Hassane ^a   Aktik, Cetin ^a   Scarlete, Mihai ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b BISHOP'S UNIVERSITY   (Canada)

Author keywords

Breakdown voltage; C V characterization; GAAS MOSFET; GAAS passivation; gate dielectric; interface traps; leakage current; metal oxide semiconductor (MOS) capacitor; polymer thin films; polymer based CVD; SICON

Indexed keywords

BREAKDOWN VOLTAGE; C-V CHARACTERIZATION; GAAS; GAAS MOSFET; GAAS PASSIVATION; GATE-DIELECTRIC INTERFACES; INTERFACE TRAPS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR (MOS) CAPACITOR; POLYMER THIN FILMS;

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; FUNCTIONAL POLYMERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDE FILMS; OXYGEN; PASSIVATION; PLASTIC FILMS; POLYMER FILMS; POLYMERIC FILMS; POLYMERS; SEMICONDUCTING GALLIUM; SMELTING; SYNTHESIS (CHEMICAL); THIN FILMS;

MOS CAPACITORS;

EID: 77955177148     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051488     Document Type: Article

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