Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 830-832

  Gaucci, P ^a   Valletta, A ^a   Mariucci, L ^a   Pecora, A ^a   Maiolo, L ^a   Fortunato, G ^a  

^a CNR   (Italy)

Author keywords

Numerical simulations; polycrystalline silicon; self heating effects; thin film transistors (TFTs)

Indexed keywords

2-D NUMERICAL SIMULATION; BIAS TEMPERATURE STRESS; NUMERICAL SIMULATION; OUTPUT CHARACTERISTICS; OXIDE CHARGE DENSITY; POLY-CRYSTALLINE SILICON; POLYCRYSTALLINE; SELF-ALIGNED; SELF-HEATING; SELF-HEATING EFFECT; SPATIAL DISTRIBUTION;

COMPUTER SIMULATION; HEATING; MATHEMATICAL MODELS; POLYSILICON; SIZE DISTRIBUTION;

THIN FILM TRANSISTORS;

EID: 77955175795     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2051137     Document Type: Article

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