Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Ziegler, Mathias ^a,d   Hempel, Martin ^a   Larsen, Henning E ^b   Tomm, Jens W ^a   Andersen, Peter E ^b   Clausen, Sønnik ^b   Elliott, Stella N ^c   Elsaesser, Thomas ^a  

^a MAX BORN INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c CARDIFF UNIVERSITY   (United Kingdom)

^d BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATASTROPHIC OPTICAL DAMAGES; DEVICE TEMPERATURE; DIODE LASERS; EXCESS ENERGY; LOCALIZED DAMAGE; OPERATION PARAMETERS; OPTICAL EMISSIONS; OPTICAL OUTPUT; PHYSICAL LIMITS; THERMAL IMAGES; TIME RESOLUTION; TIME-RESOLVED ANALYSIS; TIME-SCALES;

LASERS;

SEMICONDUCTOR LASERS;

EID: 77955148346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463039     Document Type: Article

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