Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Ziegler, Mathias ^a   Tomm, Jens W ^a   Reeber, David ^a   Elsaesser, Thomas ^a   Zeimer, Ute ^b   Larsen, Henning E ^c   Petersen, Paul M ^c   Andersen, Peter E ^c  

^a MAX BORN INSTITUT   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CATASTROPHIC OPTICAL MIRROR DAMAGES; DEGRADATION PROCESS; DIODE LASERS; FACET DEGRADATION; NEAR-FIELD; SINGLE-PULSE; SINGLE-PULSE EXCITATIONS; STRUCTURAL DAMAGES; TEMPORAL RESOLUTION; THERMAL IMAGES; THERMAL RUNAWAYS;

DEGRADATION; ELECTRIC CONVERTERS;

MIRRORS;

EID: 67049156198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133339     Document Type: Article

References (17)

1. C. H. Henry, P. M. Petroff, R. A. Logan, and F. R. Meritt, J. Appl. Phys. 0021-8979 50, 3721 (1979). 10.1063/1.326278
2. W. Nakwaski, J. Appl. Phys. 0021-8979 57, 2424 (1985). 10.1063/1.334350
3. R. Schatz and C. G. Bethea, J. Appl. Phys. 0021-8979 76, 2509 (1994). 10.1063/1.358509
4. P. G. Eliseev, Reliability Problems of Semiconductor Lasers (Nova Science, Commack, 1991), p. 213.
5. W. R. Smith, J. Appl. Phys. 0021-8979 87, 8276 (2000). 10.1063/1.373538
6. With the term dark bands, we denote lines of reduced QW emission as detected in many studies by micro-PL or CL mapping of the active area plane (after removal of contacts and sometimes substrate). Typically these lines propagate from a starting point (mostly) at the facet into the bulk along the propagation directions of the optical mode(s).
7. M. Bou Sanayeh, A. Jaeger, W. Schmid, S. Tautz, P. Brick, K. Streubel, and G. Bacher, Appl. Phys. Lett. 0003-6951 89, 101111 (2006). 10.1063/1.2345225
8. K. H. Park, J. K. Lee, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, J. Y. Jeong, S. Nahm, and J. Jeong, Appl. Phys. Lett. 0003-6951 73, 2567 (1998). 10.1063/1.122557
9. J. H. Jacob, R. Petr, M. A. Jaspan, S. D. Swartz, M. T. Knapczyk, A. M. Flusberg, A. K. Chin, and I. Smilanski, Proc. SPIE 0277-786X 7198, 719815 (2009). 10.1117/12.807717
10. M. Ziegler, J. W. Tomm, T. Elsaesser, C. Matthiesen, M. Bou Sanayeh, and P. Brick, Appl. Phys. Lett. 0003-6951 92, 103514 (2008). 10.1063/1.2898202
11. Devices of type SPL CG81-2S have been purchased at http://www.rutronik. com.
12. Regular degradation of this type of devices involves gradual power loss and narrowing of the nearfield starting at the edges of the emitter stripes. It is thermally activated and does not involve the front facet.
13. This data is obtained by using an extrapolated calibration curve that has been established from calibration measurements of a nonoperating device in the 25-100 °C range.
14. T. J. Ochalski, D. Pierścińska, K. Pierściń ski, M. Bugajski, J. W. Tomm, T. Grunske, and A. Kozlowska, Appl. Phys. Lett. 0003-6951 89, 071104 (2006). 10.1063/1.2335675
15. B. W. Hakki and F. R. Nash, J. Appl. Phys. 0021-8979 45, 3907 (1974). 10.1063/1.1663885
16. O. Ueda, K. Wakao, S. Komiya, A. Yamaguchi, S. Isozumi, and I. Umebu, J. Appl. Phys. 0021-8979 58, 3996 (1985). 10.1063/1.335576
17. C. W. Snyder, J. W. Lee, R. Hull, and R. A. Logan, Appl. Phys. Lett. 67, 488 (1995). 10.1063/1.114545