Simulation of magnetic tunnel junction in ferromagnetic/insulator/ semiconductor structure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7377, Issue , 2009, Pages

  Kostrov, Alexander I ^a   Stempitsky, Viktor R ^a   Kazimirchik, Vladimir N ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

Behavioral model; Density of states; Macromodel; Magnetic tunnel junction; Memory cell; MRAM; Shottky barrier; Spin dependent transport

Indexed keywords

BEHAVIORAL MODEL; DENSITY OF STATES; MACROMODEL; MAGNETIC TUNNEL JUNCTION; MEMORY CELL; MRAM; SHOTTKY BARRIER; SPIN-DEPENDENT TRANSPORT;

CELL MEMBRANES; CHARGE INJECTION; COMPUTATIONAL METHODS; COMPUTER HARDWARE DESCRIPTION LANGUAGES; MAGNETIC MATERIALS; MAGNETIC STORAGE; MAGNETISM; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE; SIMULATORS; SPIN DYNAMICS; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

SEMICONDUCTOR JUNCTIONS;

EID: 70349985103     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.836973     Document Type: Conference Paper

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