The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope

Journal of Magnetism and Magnetic Materials

Volumn 304, Issue 1, 2006, Pages

  Shu, Min Fong ^a   Canizo Cabrera, A ^a   Hsu, Chih Cheng ^a   Chen, C C ^b   Wu, J C ^b   Yang, Chao Chen ^c   Wu, Te ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c OVERSEAS CHINESE INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Area resistance; Conducting atomic force microscopy; Magnetic tunneling junction; Magnetoresistance

Indexed keywords

ATOMIC FORCE MICROSCOPY; DC GENERATOR MOTORS; HYSTERESIS; INORGANIC COMPOUNDS; MAGNETIZATION; MAGNETOMETERS; MAGNETORESISTANCE; SWITCHING; VOLTAGE MEASUREMENT;

ALTERNATING GRADIENT MAGNETOMETERS (AGM); AREA-RESISTANCE; CONDUCTING ATOMIC FORCE MICROSCOPY; MAGNETIC TUNNELING JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 33646876641     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.02.248     Document Type: Article

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