Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Mannino, Giovanni ^a   Spinella, Corrado ^a   Ruggeri, Rosa ^b   La Magna, Antonino ^a   Fisicaro, Giuseppe ^a   Fazio, Enza ^b   Neri, Fortunato ^b   Privitera, Vittorio ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; AMORPHOUS VOLUMES; CONVENTIONAL ANNEALING; CRYSTAL GRAINS; CRYSTALLINE GRAINS; EXPERIMENTAL APPROACHES; HOMOGENOUS NUCLEATION; INFRARED LASER; IR LASERS; LASER SOURCES; MILLISECOND ANNEALING; NON-STEADY REGIME; RAPID TEMPERATURE; SPONTANEOUS CRYSTALLIZATION; THEORETICAL MODELS; TIME EVOLUTIONS; TRANSIENT TEMPERATURE;

CRYSTALLIZATION; GRAIN GROWTH; INFRARED LASERS; IRRADIATION; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING;

AMORPHOUS SILICON;

EID: 77955126910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3459959     Document Type: Article

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