Infrared semiconductor laser crystallization of silicon thin films using diamond-like carbon as photoabsorption layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 3 B, 2007, Pages 1254-1257

  Sano, Naoki ^a   Maki, Masato ^b   Andoh, Nobuyuki ^b   Sameshima, Toshiyuki ^b  

^a Hightec Systems Corporation   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Diamond like carbon; Electron backscattering patterns; Laser crystallization, thin film transistor; Laser diode; Poly crystal line silicon; Raman scattering

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTALLIZATION; IRRADIATION; POLYSILICON; RAMAN SCATTERING; SEMICONDUCTOR LASERS;

DIAMOND-LIKE CARBON; ELECTRON BACKSCATTERING DIFFRACTION PATTERN; LASER POWER DENSITY; PHOTOABSORPTION LAYER; THRESHOLD ENERGY DENSITY;

THIN FILMS;

EID: 34547841950     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1254     Document Type: Article

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