Selective epitaxial growth of 4H-SiC with SiO2 mask by low-temperature halo-carbon homoepitaxial method

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 149-152

  Krishnan, Bharat ^a   Das, Hrishikesh ^a   Lin, Huang De ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Halide; Halo carbon precursor; Homoepitaxial growth; SEG; Selective epitaxial growth; SiO2 mask

Indexed keywords

CARBON; CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; MORPHOLOGY; SILICA; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS; SURFACE DEFECTS; TEMPERATURE;

CARBON PRECURSORS; CRYSTAL QUALITIES; GROWTH CONDITIONS; HALIDE; HOMOEPITAXIAL GROWTH; LOWER TEMPERATURES; SELECTIVE EPITAXIAL GROWTH; TRIANGULAR DEFECTS;

GROWTH RATE;

EID: 38449122324     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.149     Document Type: Conference Paper

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