Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 23, 2009, Pages

  Hirahara, Toru ^a   Komorida, Taku ^a   Gu, Yan ^a   Nakamura, Fumitaka ^a   Idzuchi, Hiroshi ^a   Morikawa, Harumo ^a,b   Hasegawa, Shuji ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954719387     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.235419     Document Type: Article

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